DMS 85099B

Technical Characteristics

• Semiconductor Material

  silicon

• Power Rating Per Characteristic

  100.0 watts small-signal input power, common-collector minimum

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Inclosure Material

  metal

• Nominal Thread Size

  0.250 inches

• Mounting Method

  threaded stud

• Mounting Facility Quantity

  1

• Voltage Rating In Volts Per Characteristic

  100.0 maximum breakdown voltage, collector-to-base, emitter open

• Thread Series Designator

  unf

• Special Features

  junction pattern arrangement: pnp

• Overall Length

  1.335 inches maximum

• Internal Configuration

  junction contact

• Terminal Type And Quantity

  3 tab, solder lug

• Features Provided

  hermetically sealed case

• Current Rating Per Characteristic

  10.00 amperes source cutoff current maximum

• Overall Diameter

  0.687 inches maximum