213Z041U01
Semiconductor Devices and Associated Hardware
TRANSISTOR
213Z041U01
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
250.0 maximum collector to emitter voltage/static/base open and 500.0 maximum collector to emitter reverse voltage and 5.0 maximum emitter to base voltage, instantaneous
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Mounting Facility Quantity
2
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Overall Length
0.375 inches nominal
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Electrode Internally-Electrically Connected To Case
collector
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Power Rating Per Characteristic
100.0 watts small-signal input power, common-collector absolute
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Current Rating Per Characteristic
5.00 amperes source cutoff current maximum
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Overall Diameter
0.875 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon