2N512B

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N512B

5961-00-044-2606

5961 - Semiconductor Devices and Associated Hardware

Burns And Towne Inc

TRANSISTOR

ACT NOW! SUBMIT A QUICK QUOTE.

Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    40.0 maximum breakdown voltage, collector-to-emitter, base open and 80.0 maximum breakdown voltage, collector-to-base, emitter open and 30.0 maximum breakdown voltage, emitter-to-base, collector open

  • Specification/standard Data

    80131-release3168 professional/industrial association specification

  • Inclosure Material

    metal

  • Electrode Internally-Electrically Connected To Case

    collector

  • Overall Diameter

    0.783 inches maximum

  • Maximum Operating Temp Per Measurement Point

    100.0 deg celsius junction

  • Current Rating Per Characteristic

    5.00 amperes source cutoff current minimum and 25.00 amperes source cutoff current maximum

  • Overall Length

    0.380 inches maximum

  • Special Features

    junction pattern arrangement: pnp

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Terminal Type And Quantity

    2 tab, solder lug and 1 case

  • Mounting Facility Quantity

    2

  • Mounting Method

    unthreaded hole

  • Semiconductor Material

    germanium

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
Read more...

Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
Read more...

Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
Read more...