2N2979

Technical Characteristics

• Mounting Method

  terminal

• Voltage Rating In Volts Per Characteristic

  60.0 maximum breakdown voltage, collector-to-emitter, base open all transistor and 60.0 maximum breakdown voltage, collector-to-base, emitter open all transistor and 6.0 maximum breakdown voltage, emitter-to-base, collector open all transistor

• Overall Diameter

  0.230 inches maximum

• Joint Electronic Device Engineering Council/jedec/case Outline Designation

  to-71

• Semiconductor Material

  silicon all transistor

• Power Rating Per Characteristic

  250.0 milliwatts small-signal input power, common-collector minimum all transistor

• Current Rating Per Characteristic

  30.00 milliamperes source cutoff current maximum all transistor

• Overall Length

  0.210 inches maximum

• Special Features

  all transistor junction pattern arrangement: npn

• Terminal Length

  0.500 inches minimum

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Component Name And Quantity

  2 transistor

• Terminal Type And Quantity

  6 uninsulated wire lead

• Inclosure Material

  metal

• Terminal Circle Diameter

  0.100 inches nominal