G181-725-001
Semiconductor Devices and Associated Hardware
TRANSISTOR
G181-725-001
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Voltage Rating In Volts Per Characteristic
100.0 maximum collector to base voltage, dc and 60.0 maximum collector to emitter voltage/static/base open and 100.0 maximum collector to emitter reverse voltage, with base short-circuited to emitter and 7.0 maximum emitter to base voltage, dc
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Test Data Document
88818-g181-725 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Overall Diameter
0.875 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Overall Length
0.450 inches maximum
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Semiconductor Material
silicon
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Power Rating Per Characteristic
1.17 watts small-signal input power, common-collector preset
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Current Rating Per Characteristic
30.00 amperes source cutoff current maximum
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal
 
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