2N5766

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N5766

5961-00-122-1123

5961 - Semiconductor Devices and Associated Hardware

Electronic Industries Association

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Diameter

    0.285 inches maximum

  • Internal Configuration

    junction contact

  • Internal Junction Configuration

    npn

  • Mounting Method

    terminal

  • Semiconductor Material

    silicon

  • ~1

    breakdown voltage, emitter-to-base, collector open and 25.0 maximum breakdown vo

  • ~2

    ltage, collector-to-emitter, base open

  • Current Rating Per Characteristic

    200.00 milliamperes maximum collector current, dc and 40.00 milliamperes maximum

  • Power Rating Per Characteristic

    5.0 watts maximum collector power dissipation

  • Overall Length

    0.212 inches maximum

  • Features Provided

    hermetically sealed case

  • Voltage Rating In Volts Per Characteristic

    55.0 maximum breakdown voltage, collector-to-base, emitter open and 3.5 maximum

  • ~1

    base current, dc

  • Terminal Type And Quantity

    4 ribbon

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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