A531A014-101
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
A531A014-101
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Overall Diameter
0.424 inches maximum
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Mounting Facility Quantity
1
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
t0-64
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Mounting Method
threaded stud
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Overall Width Across Flats
0.437 inches maximum
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Current Rating Per Characteristic
30.00 milliamperes maximum gate trigger current,dc and 4.70 amperes maximum average on-state current,180 degrees conduction angle,average over a full 60-hz cycle
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Thread Series Designator
unf
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Inclosure Material
metal
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Overall Length
0.400 inches maximum
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Internal Configuration
junction contact
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Internal Junction Configuration
pnpn
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Features Provided
hermetically sealed case
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Nominal Thread Size
0.190 inches
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
1.85 maximum forward voltage,peak and 2.0 maximum gate trigger voltage,dc and 400.0 maximum reverse voltage,peak
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Terminal Type And Quantity
1 threaded stud and 2 tab,solder lug
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AS6081 Methods



