3N170

Semiconductor Devices and Associated Hardware

TRANSISTOR

3N170

5961-00-147-7439

5961 - Semiconductor Devices and Associated Hardware

Joint Electron Device Engineering

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Technical Characteristics

  • Electrode Internally-Electrically Connected To Case

    collector

  • Mounting Method

    terminal

  • Overall Diameter

    0.209 inches minimum and 0.230 inches maximum

  • Channel Polarity And Control Type (Non-Core)

    n-channel junction type

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    30.00 milliamperes source cutoff current maximum of standard range

  • Specification/standard Data

    80131-release5983 professional/industrial association specification

  • Terminal Length

    0.500 inches minimum

  • Power Rating Per Characteristic

    800.0 milliwatts small-signal input power, common-collector absolute

  • Internal Configuration

    field effect

  • Inclosure Material

    metal

  • Terminal Type And Quantity

    4 uninsulated wire lead

  • Voltage Rating In Volts Per Characteristic

    10.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 25.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source

  • Overall Length

    0.170 inches minimum and 0.210 inches maximum

  • Terminal Circle Diameter

    0.100 inches nominal

Certified to
AS6081 Methods

Implementing Quality Procurement

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