B914363/1

Semiconductor Devices and Associated Hardware

TRANSISTOR

B914363/1

5961-00-161-3464

5961 - Semiconductor Devices and Associated Hardware

Raytheon Systems Ltd

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    ceramic

  • Mounting Facility Quantity

    1

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Internal Junction Configuration

    npn

  • Overall Length

    0.375 inches maximum

  • Current Rating Per Characteristic

    2.00 amperes source cutoff current maximum

  • Internal Configuration

    junction contact

  • Power Rating Per Characteristic

    10.0 watts small-signal input power, common-collector absolute

  • Overall Height

    0.223 inches maximum

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Voltage Rating In Volts Per Characteristic

    60.0 maximum collector to emitter voltage/static/base open and 60.0 maximum collector to base voltage, dc and 4.0 maximum emitter to base voltage, instantaneous

  • Overall Width

    0.165 inches maximum

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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