1300176-1
Semiconductor Devices and Associated Hardware
TRANSISTOR
1300176-1
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Facility Quantity
1
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Test Data Document
70143-1300176 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Thread Series Designator
unf
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Voltage Rating In Volts Per Characteristic
8.0 maximum emitter to base voltage, dc and 100.0 maximum collector to base voltage, dc and 80.0 maximum collector to emitter voltage, dc and 0.6 maximum collector to emitter saturation voltage
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Terminal Type And Quantity
3 tab, solder lug
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Overall Width Across Flats
0.870 inches nominal
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Overall Diameter
0.850 inches nominal
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Semiconductor Material
silicon
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Nominal Thread Size
0.312 inches
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Transfer Ratio
40.0 minimum small-signal short-circuit forward current transfer ratio, common-emitter and 120.0 maximum small-signal short-circuit forward current transfer ratio, common-emitter
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Power Rating Per Characteristic
100.0 watts small-signal input power, common-collector preset
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Current Rating Per Characteristic
10.00 microamperes zero-gate-voltage source current preset and 20.00 amperes source cutoff current maximum
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Inclosure Material
metal
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Overall Length
1.480 inches nominal