2N5036

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N5036

5961-00-350-8240

5961 - Semiconductor Devices and Associated Hardware

Joint Electron Device Engineering

TRANSISTOR

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Technical Characteristics

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Semiconductor Material

    silicon

  • Power Rating Per Characteristic

    666.0 milliwatts small-signal input power, common-collector minimum

  • Inclosure Material

    plastic

  • Terminal Length

    0.560 inches maximum

  • Current Rating Per Characteristic

    12.00 amperes source cutoff current minimum and 8.00 amperes source cutoff current maximum

  • Overall Length

    0.910 inches maximum

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Maximum Operating Temp Per Measurement Point

    165.0 deg celsius junction

  • Voltage Rating In Volts Per Characteristic

    70.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

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