1TS3379

Technical Characteristics

• ~1

  gate to source threshold voltage all transistor

• Voltage Rating In Volts Per Characteristic

  -90.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source all transistor and -35.0 minimum breakdown voltage, drain-to-source, with all other terminals short-circuited to source all transistor and -6.0 maximum

• Mounting Method

  terminal

• Terminal Circle Diameter

  0.200 inches nominal

• Terminal Type And Quantity

  8 uninsulated wire lead

• Overall Length

  0.260 inches maximum

• Precious Material

  gold

• Overall Diameter

  0.370 inches maximum

• Semiconductor Material

  silicon all transistor

• Maximum Operating Temp Per Measurement Point

  125.0 deg celsius junction

• Features Provided

  hermetically sealed case

• Terminal Length

  0.500 inches minimum

• Component Name And Quantity

  2 transistor

• Current Rating Per Characteristic

  -10.00 nanoamperes maximum zero-gate-voltage drain current all transistor and -1.00 nanoamperes maximum reverse gate current with all other terminals short-circuit to source, junction-gate all transistor

• Inclosure Material

  metal

• Precious Material And Location

  leads gold