2N5190
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5190
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
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Technical Characteristics
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                                    Special Featuresjunction pattern arrangement: npn 
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                                    Overall Diameter0.330 inches nominal 
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                                    Semiconductor Materialsilicon 
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                                    Electrode Internally-Electrically Connected To Casecollector 
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                                    Terminal Type And Quantity3 uninsulated wire lead 
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                                    Mounting Methodterminal 
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                                    Maximum Operating Temp Per Measurement Point165.0 deg celsius junction 
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                                    Voltage Rating In Volts Per Characteristic40.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open and 40.0 maximum breakdown voltage, collector-to-emitter, base open 
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                                    Internal Configurationjunction contact 
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                                    Power Rating Per Characteristic320.0 milliwatts small-signal input power, common-collector minimum 
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                                    Terminal Length0.650 inches maximum 
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                                    Specification/Standard Data80131-release5751 professional/industrial association specification 
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                                    Inclosure Materialmetal 
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                                    Current Rating Per Characteristic4.00 amperes source cutoff current maximum and 1.00 amperes source cutoff current minimum 
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                                    Overall Length0.450 inches nominal 
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