16601887-001
Semiconductor Devices and Associated Hardware
TRANSISTOR
16601887-001
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Special Features
junction pattern arrangement: npn
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Features Provided
burn in and hermetically sealed case
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Power Rating Per Characteristic
200.0 watts small-signal input power, common-collector absolute
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Terminal Type And Quantity
2 tab, solder lug and 1 wire hook
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Semiconductor Material
silicon
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Nominal Thread Size
0.312 inches
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Voltage Rating In Volts Per Characteristic
40.0 maximum breakdown voltage, collector-to-emitter, base open and 60.0 maximum breakdown voltage, collector-to-base, emitter open and 10.0 maximum emitter to base voltage, static, collector open
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Current Rating Per Characteristic
15.00 amperes source cutoff current minimum and 60.00 amperes source cutoff current maximum
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Inclosure Material
metal
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-63
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Internal Configuration
junction contact
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Overall Width Across Flats
0.855 inches minimum and 0.875 inches maximum
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Overall Length
0.480 inches minimum and 0.535 inches maximum
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Thread Series Designator
unf
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Terminal Circle Diameter
0.485 inches minimum and 0.515 inches maximum
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Mounting Facility Quantity
1
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
threaded stud