2N3583A
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N3583A
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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                                    Internal Configurationjunction contact 
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                                    Special Featuresjunction pattern arrangement: npn 
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                                    Features Providedhermetically sealed case 
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                                    Power Rating Per Characteristic200.0 milliwatts small-signal input power, common-collector preset 
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                                    Overall Diameter0.500 inches maximum 
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                                    Semiconductor Materialsilicon 
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                                    Terminal Type And Quantity2 pin and 1 case 
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                                    Mounting Facility Quantity2 
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                                    Maximum Operating Temp Per Measurement Point200.0 deg celsius junction 
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                                    Voltage Rating In Volts Per Characteristic175.0 maximum breakdown voltage, collector-to-emitter, base open and 250.0 maximum breakdown voltage, collector-to-base, emitter open and 6.0 maximum breakdown voltage, emitter-to-base, collector open 
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                                    Mounting Methodunthreaded hole 
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                                    Inclosure Materialmetal 
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                                    Overall Length0.340 inches maximum 
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                                    Electrode Internally-Electrically Connected To Casecollector 
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                                    Current Rating Per Characteristic1.00 amperes source cutoff current minimum and 1.00 amperes source cutoff current maximum and 10.00 milliamperes zero-gate-voltage source current preset 
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