JAN2N2030
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
JAN2N2030
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Nominal Thread Size
0.500 inches
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Overall Width Across Flats
1.031 inches minimum and 1.062 inches maximum
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Inclosure Material
metal
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Terminal Type And Quantity
1 case
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Current Rating Per Characteristic
70.00 amperes maximum on-state current, average and 1000.00 amperes maximum peak nonrepetitive surge current
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Voltage Rating In Volts Per Characteristic
5.0 maximum peak negative gate voltage
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Voltage Rating In Volts Per Characteristic
400.0 maximum repetitive peak reverse voltage and 500.0 maximum nonrepetitive peak reverse voltage and 280.0 maximum off-state voltage, rms total and 10.0 maximum peak positive gate voltage and 1
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Specification/Standard Data
81349-mil-s-19500/203 government specification
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Terminal Type And Quantity
3 insulated wire lead w/terminal lug and 349-mil-s-19500
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Thread Series Designator
unf
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Power Rating Per Characteristic
5.0 watts maximum peak gate power dissipation and 0.5 watts maximum average gate power dissipation
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Mounting Method
threaded stud
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Internal Junction Configuration
npnp
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Internal Configuration
junction contact
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Overall Length
2.577 inches maximum
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AS6081 Methods



