11290964

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICES,UNITIZED

11290964

5961-00-484-5141

5961 - Semiconductor Devices and Associated Hardware

Ballistic Missile Defense Systems

SEMICONDUCTOR DEVICES,UNITIZED

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    60.0 maximum collector to emitter voltage/static/base open all transistor and 60.0 maximum collector to base voltage, dc all transistor and 5.0 maximum emitter to base voltage, dc all transistor

  • Mounting Method

    terminal

  • Overall Diameter

    0.335 inches minimum and 0.370 inches maximum

  • Overall Length

    0.140 inches minimum and 0.260 inches maximum

  • Semiconductor Material

    silicon all transistor

  • Features Provided

    hermetically sealed case

  • Power Rating Per Characteristic

    600.0 milliwatts small-signal input power, common-collector absolute all transistor

  • Terminal Length

    0.500 inches minimum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Component Name And Quantity

    2 transistor

  • Special Features

    all transistor junction pattern arrangement: pnp

  • Terminal Type And Quantity

    6 uninsulated wire lead

  • Inclosure Material

    metal

  • Current Rating Per Characteristic

    600.00 milliamperes source cutoff current maximum all transistor

Certified to
AS6081 Methods

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