2N3459
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N3459
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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                                    Electrode Internally-Electrically Connected To Casecollector 
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                                    Terminal Type And Quantity3 uninsulated wire lead 
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                                    Mounting Methodterminal 
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                                    Voltage Rating In Volts Per Characteristic50.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source 
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                                    Overall Diameter0.230 inches maximum 
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                                    Channel Polarity And Control Type (Non-Core)n-channel junction type 
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                                    Features Providedhermetically sealed case 
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                                    Overall Length0.210 inches maximum 
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                                    Semiconductor Materialsilicon 
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                                    Power Rating Per Characteristic300.0 milliwatts small-signal input power, common-collector absolute 
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                                    Terminal Length0.500 inches minimum 
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                                    Maximum Operating Temp Per Measurement Point200.0 deg celsius junction 
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                                    Internal Configurationfield effect 
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                                    Inclosure Materialmetal 
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                                    Current Rating Per Characteristic4.00 milliamperes zero-gate-voltage source current megawatts 
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                                    Terminal Circle Diameter0.100 inches nominal 
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