2N514B
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N514B
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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                                    Overall Height0.450 inches maximum 
- 
                                    Current Rating Per Characteristic25.00 amperes source cutoff current maximum and 5.00 amperes source cutoff current minimum 
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                                    Inclosure Materialmetal 
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                                    Semiconductor Materialgermanium 
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                                    Mounting Methodunthreaded hole 
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                                    Maximum Operating Temp Per Measurement Point200.0 deg celsius junction 
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                                    Mounting Facility Quantity2 
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                                    Terminal Type And Quantity2 pin and 1 case 
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                                    Overall Width1.050 inches maximum 
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                                    Voltage Rating In Volts Per Characteristic80.0 maximum breakdown voltage, collector-to-base, emitter open and 30.0 maximum emitter to base voltage, static, collector open and 80.0 maximum breakdown voltage, collector-to-emitter, base open 
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                                    Joint Electronic Device Engineering Council/Jedec/Case Outline Designationt0-3 
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                                    Electrode Internally-Electrically Connected To Casecollector 
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                                    Transfer Ratio20.0 nominal small-signal short-circuit forward current transfer ratio, common-emitter 
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                                    Features Providedhermetically sealed case 
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                                    Internal Configurationjunction contact 
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                                    Power Rating Per Characteristic80.0 watts small-signal input power, common-collector preset 
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                                    Special Featuresjunction pattern arrangement: pnp 
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                                    Overall Length1.573 inches maximum 
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