2N156
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N156
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Thread Series Designator
unf
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Overall Length
1.040 inches maximum
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Internal Configuration
junction contact
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Power Rating Per Characteristic
1.5 watts small-signal input power, common-collector absolute
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Transfer Ratio
32.0 minimum static forward current transfer ratio, common-emitter
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Internal Junction Configuration
pnp
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Nominal Thread Size
0.250 inches
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-13
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Inclosure Material
metal
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Semiconductor Material
germanium
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Overall Diameter
0.650 inches maximum
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-base, emitter open and 15.0 maximum emitter to base voltage, static, collector open and 30.0 maximum breakdown voltage, collector-to-emitter, base open
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Current Rating Per Characteristic
3.00 amperes source cutoff current maximum
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Features Provided
hermetically sealed case
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Terminal Type And Quantity
3 tab, solder lug
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AS6081 Methods



