2N1199A

Semiconductor Devices and Associated Hardware

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2N1199A

5961-00-781-5164

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

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Technical Characteristics

  • Internal Configuration

    junction contact

  • Electrode Internally-Electrically Connected To Case

    collector

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Power Rating Per Characteristic

    150.0 milliwatts maximum total power dissipation

  • Precious Material

    gold

  • Inclosure Material

    metal

  • Internal Junction Configuration

    npn

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • ~1

    voltage,static,collector open

  • Voltage Rating In Volts Per Characteristic

    20.0 maximum collector to base voltage/static/emitter open and 15.0 maximum collector to emitter voltage/static/base open and 20.0 maximum collector to emitter reverse voltage,with base short-circuited to emitter and 20.0 maximum emitter to base

  • Precious Material And Location

    terminals gold

  • Test Data Document

    81349-mil-s-19500 specification

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Specification/Standard Data

    81349-mil-s-19500/131 government specification

  • Overall Diameter

    0.360 inches minimum and 0.370 inches maximum

  • Terminal Length

    1.500 inches minimum

  • Overall Length

    0.235 inches minimum and 0.260 inches maximum

Certified to
AS6081 Methods

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