2N1147A
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1147A
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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                                    Semiconductor Materialgermanium 
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                                    Voltage Rating In Volts Per Characteristic60.0 maximum breakdown voltage, collector-to-base, emitter open and 45.0 maximum breakdown voltage, collector-to-emitter, base open and 30.0 maximum breakdown voltage, emitter-to-base, collector open 
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                                    Current Rating Per Characteristic5.00 amperes maximum base current, dc and 15.00 amperes maximum collector current, dc 
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                                    Maximum Operating Temp Per Measurement Point100.0 deg celsius junction 
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                                    Specification/Standard Data80131-release3055 professional/industrial association specification 
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                                    Inclosure Materialmetal 
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                                    Overall Length0.450 inches maximum 
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                                    Overall Diameter0.875 inches maximum 
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                                    Mounting Facility Quantity2 
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                                    Electrode Internally-Electrically Connected To Casecollector 
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                                    Mounting Methodunthreaded hole 
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                                    Power Rating Per Characteristic90.0 watts maximum collector power dissipation 
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                                    Terminal Type And Quantity2 uninsulated wire lead and 1 case 
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