103H086615JR
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
103H086615JR
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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                                    Joint Electronic Device Engineering Council/Jedec/Case Outline Designationto-64 
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                                    Mounting Methodthreaded stud 
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                                    Mounting Facility Quantity1 
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                                    Nominal Thread Size0.500 inches 
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                                    Thread Series Designatorunf 
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                                    Terminal Type And Quantity3 tab w/wire lead 
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                                    Overall Length7.500 inches maximum 
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                                    Power Rating Per Characteristic5.0 watts small-signal input power, common-collector blank 
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                                    Internal Configurationjunction contact 
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                                    Maximum Operating Temp Per Measurement Point125.0 deg celsius ambient air 
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                                    Semiconductor Materialsilicon 
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                                    Current Rating Per Characteristic3.00 milliamperes forward current, average peak 
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                                    Special Featuresjunction pattern arrangement: pnpn 
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                                    Voltage Rating In Volts Per Characteristic600.0 maximum repetitive peak reverse voltage and 720.0 maximum nonrepetitive peak reverse voltage and 600.0 maximum breakover voltage, dc 
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                                    Overall Width Across Flats1.062 inches maximum 
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                                    Inclosure Materialmetal 
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