576R046H02
Semiconductor Devices and Associated Hardware
TRANSISTOR
576R046H02
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Thread Series Designator
unf
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Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud
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Current Rating Per Characteristic
10.00 milliamperes zero-gate-voltage source current major
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case and mounting hardware
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Voltage Rating In Volts Per Characteristic
-150.0 maximum breakdown voltage, collector-to-emitter, with specified resistance between base and emitter and 2.5 maximum base to emitter voltage, dc and 2.5 maximum collector to emitter voltage, dc
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Semiconductor Material
silicon
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Nominal Thread Size
0.312 inches
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Inclosure Material
metal
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Overall Length
0.410 inches nominal
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Overall Diameter
1.280 inches nominal