2N1184

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N1184

5961-00-842-9773

5961 - Semiconductor Devices and Associated Hardware

Joint Electron Device Engineering

TRANSISTOR

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Technical Characteristics

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Maximum Operating Temp Per Measurement Point

    100.0 deg celsius case

  • Voltage Rating In Volts Per Characteristic

    45.0 maximum breakdown voltage, collector-to-base, emitter open and 20.0 maximum breakdown voltage, collector-to-emitter, base open and 20.0 maximum breakdown voltage, emitter-to-base, collector open

  • Power Rating Per Characteristic

    1.0 watts small-signal input power, common-collector minimum

  • Overall Length

    0.300 inches nominal

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Current Rating Per Characteristic

    500.00 milliamperes source cutoff current minimum and 3.00 amperes source cutoff current maximum

  • Terminal Length

    0.406 inches nominal

  • Semiconductor Material

    germanium

  • Inclosure Material

    metal

  • Internal Junction Configuration

    pnp

  • Overall Diameter

    0.600 inches nominal

  • Terminal Circle Diameter

    0.281 inches nominal

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

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Providing Quality People

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