USN2N1309

Semiconductor Devices and Associated Hardware

TRANSISTOR

USN2N1309

5961-00-851-5923

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

TRANSISTOR

ACT NOW! SUBMIT A QUICK QUOTE.

Technical Characteristics

  • Current Rating Per Characteristic

    300.00 milliamperes source cutoff current maximum and 6.00 microamperes zero-gate-voltage source current preset

  • Semiconductor Material

    germanium

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case and electrostatic sensitive

  • Voltage Rating In Volts Per Characteristic

    30.0 maximum breakdown voltage, collector-to-base, emitter open and 25.0 maximum breakdown voltage, emitter-to-base, collector open

  • Overall Diameter

    0.370 inches maximum

  • Inclosure Material

    glass

  • Overall Length

    0.260 inches maximum

  • Special Features

    junction pattern arrangement: pnp

  • Mounting Method

    terminal

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Electrode Internally-Electrically Connected To Case

    collector

  • Power Rating Per Characteristic

    150.0 milliwatts small-signal input power, common-collector minimum

  • Terminal Length

    1.500 inches minimum

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
Read more...

Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
Read more...

Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
Read more...