2N2140
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N2140
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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                                    Power Rating Per Characteristic833.0 milliwatts small-signal input power, common-collector minimum 
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                                    Overall Diameter0.875 inches maximum 
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                                    Internal Configurationjunction contact 
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                                    Current Rating Per Characteristic3.00 amperes source cutoff current minimum and 3.00 amperes source cutoff current maximum 
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                                    Features Providedhermetically sealed case 
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                                    Specification/Standard Data80131-release3574 professional/industrial association specification 
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                                    Mounting Facility Quantity2 
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                                    Terminal Type And Quantity2 uninsulated wire lead and 1 case 
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                                    Mounting Methodunthreaded hole 
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                                    Semiconductor Materialgermanium 
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                                    Inclosure Materialmetal 
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                                    Overall Length0.375 inches nominal 
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                                    Voltage Rating In Volts Per Characteristic60.0 maximum breakdown voltage, collector-to-emitter, base open and 75.0 maximum breakdown voltage, collector-to-base, emitter open and 40.0 maximum breakdown voltage, emitter-to-base, collector open 
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                                    Electrode Internally-Electrically Connected To Casecollector 
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                                    Maximum Operating Temp Per Measurement Point100.0 deg celsius junction 
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                                    Special Featuresjunction pattern arrangement: pnp 
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