2N918M0D
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N918M0D
5961 - Semiconductor Devices and Associated Hardware
Texas Instruments Incorporated
TRANSISTOR
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Technical Characteristics
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Internal Junction Configuration
npn
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Current Rating Per Characteristic
50.00 milliamperes maximum collector current, dc
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Precious Material And Location
terminal surface gold
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Precious Material
gold
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Terminal Type And Quantity
4 uninsulated wire lead
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Inclosure Material
metal
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Overall Length
0.210 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.230 inches maximum
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Internal Configuration
junction contact
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Mounting Method
terminal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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~1
voltage, dc and 3.0 maximum emitter to base voltage, dc
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Voltage Rating In Volts Per Characteristic
30.0 maximum collector to base voltage, dc and 15.0 maximum collector to emitter
 - 
                                    
Power Rating Per Characteristic
200.0 milliwatts maximum collector power dissipation
 - 
                                    
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
 
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