1B3112-1
Semiconductor Devices and Associated Hardware
TRANSISTOR
1B3112-1
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Overall Width Across Flats
0.687 inches nominal
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Thread Series Designator
unf
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Terminal Type And Quantity
3 tab, solder lug
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
3.0 watts small-signal input power, common-collector absolute
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Semiconductor Material
silicon
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Overall Diameter
0.610 inches maximum
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Overall Length
0.380 inches nominal
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal
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Nominal Thread Size
0.250 inches
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Current Rating Per Characteristic
5.00 amperes source cutoff current minimum and 7.50 amperes source cutoff current maximum
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Voltage Rating In Volts Per Characteristic
80.0 maximum collector to emitter voltage, dc and 10.0 maximum emitter to base voltage, dc
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AS6081 Methods



