P10619-2
Semiconductor Devices and Associated Hardware
TRANSISTOR
P10619-2
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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                                    Electrode Internally-Electrically Connected To Casecollector 
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                                    Internal Configurationjunction contact 
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                                    Special Featuresjunction pattern arrangement: npn 
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                                    Terminal Type And Quantity2 uninsulated wire lead 
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                                    Voltage Rating In Volts Per Characteristic90.0 maximum breakdown voltage, collector-to-base, emitter open and 90.0 maximum breakdown voltage, collector-to-emitter, base open and 7.0 maximum breakdown voltage, emitter-to-base, collector open 
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                                    Features Providedhermetically sealed case 
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                                    Overall Diameter0.770 inches maximum 
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                                    Semiconductor Materialsilicon 
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                                    Power Rating Per Characteristic150.0 watts small-signal input power, common-collector minimum 
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                                    Current Rating Per Characteristic4.50 amperes source cutoff current minimum and 15.00 amperes source cutoff current maximum 
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                                    Overall Length0.062 inches maximum 
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                                    Specification/Standard Data80131-release4716 professional/industrial association specification 
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                                    Mounting Facility Quantity2 
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                                    Maximum Operating Temp Per Measurement Point200.0 deg celsius junction 
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                                    Mounting Methodunthreaded hole 
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                                    Inclosure Materialmetal 
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