2N2630

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N2630

5961-00-958-5747

5961 - Semiconductor Devices and Associated Hardware

Joint Electron Device Engineering

TRANSISTOR

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Technical Characteristics

  • Terminal Circle Diameter

    0.100 inches nominal

  • Inclosure Material

    metal

  • Semiconductor Material

    germanium

  • Voltage Rating In Volts Per Characteristic

    10.0 maximum breakdown voltage, collector-to-emitter, base open and 18.0 maximum breakdown voltage, collector-to-base, emitter open and 4.0 maximum breakdown voltage, emitter-to-base, collector open

  • Terminal Length

    0.500 inches minimum

  • Overall Length

    0.210 inches maximum

  • Features Provided

    hermetically sealed case

  • Internal Configuration

    junction contact

  • Current Rating Per Characteristic

    100.00 milliamperes source cutoff current maximum

  • Specification/standard Data

    80131-release4084 professional/industrial association specification

  • Special Features

    junction pattern arrangement: pnp

  • Overall Diameter

    0.230 inches maximum

  • Power Rating Per Characteristic

    300.0 milliwatts small-signal input power, common-collector minimum

  • Mounting Method

    terminal

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Electrode Internally-Electrically Connected To Case

    collector

Certified to
AS6081 Methods

Implementing Quality Procurement

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