2N703

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N703

5961-00-988-9793

5961 - Semiconductor Devices and Associated Hardware

Joint Electron Device Engineering

TRANSISTOR

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Technical Characteristics

  • ~1

    data on certain environmental and performanc

  • Test Data Document

    81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Overall Diameter

    0.209 inches minimum and 0.230 inches maximum

  • Power Rating Per Characteristic

    300.0 milliwatts small-signal input power, common-collector preset

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Specification/standard Data

    81349-mil-s-19500/153 government specification

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    25.0 maximum collector to emitter voltage, dc and 40.0 maximum collector to base voltage, dc and 5.0 maximum emitter to base voltage, dc

  • Terminal Length

    0.500 inches minimum

  • Inclosure Material

    metal

  • Overall Length

    0.170 inches minimum and 0.210 inches maximum

  • Terminal Circle Diameter

    0.100 inches nominal

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AS6081 Methods

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