2N6575

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N6575

5961-01-025-6193

5961 - Semiconductor Devices and Associated Hardware

Pd & E Electronics Llc

TRANSISTOR

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Technical Characteristics

  • End Item Identification

    an/tpb-1c radar bomb dir set

  • Joint Electronic Device Engineering Council/jedec/case Outline Designation

    to-3

  • Electrode Internally-Electrically Connected To Case

    collector

  • Overall Length

    1.308 inches minimum and 1.385 inches maximum

  • Power Rating Per Characteristic

    125.0 watts small-signal input power, common-collector preset

  • Current Rating Per Characteristic

    10.00 amperes zero-gate-voltage source current blank and 4.00 amperes zero-gate-voltage source current maximum of standard range

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    300.0 maximum breakdown voltage, collector-to-emitter, base open and 700.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open

  • Overall Width

    1.050 inches minimum

  • Terminal Type And Quantity

    2 pin and 1 case

  • Mounting Facility Quantity

    2

  • Overall Height

    0.660 inches minimum and 0.798 inches maximum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

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Providing Quality People

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