N82S115F

Technical Characteristics

• Terminal Type And Quantity

  24 printed circuit

• Memory Device Type

  rom

• Time Rating Per Chacteristic

  60.00 nanoseconds maximum propagation delay time, low to high level output

• Voltage Rating And Type Per Characteristic

  1.2 volts minimum power source and 5.5 volts maximum power source

• Terminal Surface Treatment

  gold

• Input Circuit Pattern

  8 input

• Output Logic Form

  transistor-transistor logic

• Inclosure Configuration

  dual-in-line

• Maximum Power Dissipation Rating

  1320.0 milliwatts

• Body Height

  0.080 inches minimum and 0.120 inches maximum

• Iii Precious Material

  gold

• Iii Precious Material And Location

  terminals gold

• Iii Unpackaged Unit Weight

  6.5 grams

• (Non-Core Data) Word Quantity

  512

• (Non-Core Data) Bit Quantity

  4096

• Inclosure Material

  ceramic and metal

• Features Provided

  hermetically sealed and monolithic and programmable and w/enable and w/storage and w/strobe and 3-state output and schottky and bipolar

• Storage Temp Range

  -65.0 to 150.0 deg celsius

• Operating Temp Range

  -0.0 to 75.0 deg celsius

• Body Width

  0.580 inches minimum and 0.610 inches maximum

• Body Length

  1.190 inches minimum and 1.230 inches maximum