2N5302
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5302
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Special Features
junction pattern arrangement: npn
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Power Rating Per Characteristic
200.0 watts small-signal input power, common-collector absolute
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Overall Length
1.832 inches minimum and 1.872 inches maximum
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Features Provided
hermetically sealed case
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Voltage Rating In Volts Per Characteristic
60.00 maximum breakdown voltage, collector-to-emitter, base open
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Overall Width
1.050 inches maximum
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Semiconductor Material
silicon
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Terminal Type And Quantity
1 case and 2 pin
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Mounting Facility Quantity
2
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End Item Identification
e-3a
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Current Rating Per Characteristic
30.00 amperes source cutoff current maximum and 1.00 milliamperes zero-gate-voltage source current preset
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Internal Configuration
junction contact
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Overall Height
0.250 inches minimum and 0.450 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
t0-3
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Transfer Ratio
15.0 minimum static forward current transfer ratio, common-emitter and 60.0 maximum static forward current transfer ratio, common-emitter
 
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