A532E001-101
Semiconductor Devices and Associated Hardware
TRANSISTOR
A532E001-101
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Current Rating Per Characteristic
3.00 amperes source cutoff current maximum and 15.00 microamperes zero-gate-voltage source current preset
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Features Provided
hermetically sealed case
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Voltage Rating In Volts Per Characteristic
40.0 maximum breakdown voltage, collector-to-emitter, base open
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-8
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Semiconductor Material
silicon
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Overall Length
0.270 inches minimum and 0.330 inches maximum
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Terminal Circle Diameter
0.282 inches nominal
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Diameter
0.550 inches minimum and 0.650 inches maximum
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Mounting Method
terminal
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Terminal Length
0.360 inches minimum and 0.440 inches maximum
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Power Rating Per Characteristic
25.00 watts small-signal input power, common-collector absolute
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AS6081 Methods



