A430E

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,DIODE

A430E

5961-01-070-8939

5961 - Semiconductor Devices and Associated Hardware

General Electric Co

SEMICONDUCTOR DEVICE,DIODE

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Technical Characteristics

  • Inclosure Material

    ceramic

  • Current Rating Per Characteristic

    50.00 milliamperes forward current, average nanoamperes

  • Voltage Rating In Volts Per Characteristic

    500.0 maximum repetitive peak reverse voltage and 650.0 maximum nonrepetitive peak reverse voltage

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Overall Diameter

    2.240 inches minimum and 2.300 inches maximum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Power Rating Per Characteristic

    30.0 watts small-signal input power, common-collector maximum

  • Overall Length

    1.018 inches minimum and 1.065 inches maximum

  • Mounting Method

    press fit

  • Terminal Type And Quantity

    2 ferrule

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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