JAN2N6212
Semiconductor Devices and Associated Hardware
TRANSISTOR
JAN2N6212
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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~1
data on certain environmental and performanc
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Special Features
junction pattern arrangement: pnp
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Power Rating Per Characteristic
3.0 watts small-signal input power, common-collector preset
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Overall Diameter
0.500 inches maximum
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Semiconductor Material
silicon
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Specification/Standard Data
81349-mil-s-19500/461 government specification
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Mounting Facility Quantity
2
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type
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Overall Length
0.340 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-66
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Electrode Internally-Electrically Connected To Case
collector
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