121-787-01

Technical Characteristics

• Inclosure Material

  metal

• Overall Length

  0.835 inches nominal

• Internal Configuration

  field effect-dual gate single transistor

• Mounting Method

  unthreaded hole

• Current Rating Per Characteristic

  30.00 milliamperes maximum zero-gate-voltage drain current single transistor

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius ambient air

• Overall Height

  0.110 inches nominal

• Overall Width

  0.210 inches nominal

• Mounting Facility Quantity

  1

• Channel Polarity And Control Type

  n-channel insulated gate type single transistor

• Component Name And Quantity

  1 transistor and 2 semiconductor device diode

• Semiconductor Material

  silicon single transistor

• Voltage Rating In Volts Per Characteristic

  20.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source single transistor

• Power Rating Per Characteristic

  0.1 watts maximum total device dissipation single transistor

• Capacitance Rating In Picofarads

  7.0 maximum single transistor

• Terminal Type And Quantity

  4 ribbon