2N6373
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N6373
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Special Features
weapon system essential; junction pattern arrangement: npn
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-66
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Facility Quantity
1
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Criticality Code Justification
feat
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Power Rating Per Characteristic
22.0 watts small-signal input power, common-collector minimum
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Voltage Rating In Volts Per Characteristic
70.0 maximum breakdown voltage, collector-to-emitter, base open and 70.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Terminal Type And Quantity
1 case and 2 pin
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Specification/Standard Data
80131-release6417 professional/industrial association specification
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Overall Length
0.240 inches minimum and 0.340 inches maximum
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Current Rating Per Characteristic
2.00 amperes source cutoff current minimum and 6.00 amperes source cutoff current maximum
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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End Item Identification
ship, ohio class ssn (trident)
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Overall Diameter
0.620 inches maximum
 
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