5L.5513.001.37

Semiconductor Devices and Associated Hardware

TRANSISTOR

5L.5513.001.37

5961-01-093-0852

5961 - Semiconductor Devices and Associated Hardware

Eads Deutschland Gmbh -Verteidigung

TRANSISTOR

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Technical Characteristics

  • Joint Electronic Device Engineering Council/jedec/case Outline Designation

    to-66

  • Electrode Internally-Electrically Connected To Case

    collector

  • Power Rating Per Characteristic

    40.0 watts small-signal input power, common-collector preset

  • Specification/standard Data

    80131-release6483 professional/industrial association specification

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Current Rating Per Characteristic

    2.00 amperes source cutoff current minimum and 4.00 amperes source cutoff current maximum

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Terminal Type And Quantity

    1 case and 2 pin

  • Mounting Facility Quantity

    2

  • Overall Length

    0.250 inches minimum and 0.340 inches maximum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

  • Voltage Rating In Volts Per Characteristic

    130.0 maximum breakdown voltage, collector-to-base, emitter open and 120.0 maximum breakdown voltage, collector to emitter, sustained and 5.0 maximum breakdown voltage, emitter-to-base, collector open

  • Overall Diameter

    0.620 inches maximum

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

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