352-8517-012
Semiconductor Devices and Associated Hardware
TRANSISTOR
352-8517-012
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Current Rating Per Characteristic
m6.00 amperes maximum collector current,dc and m2.00 amperes maximum base current,dc
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Power Rating Per Characteristic
40.0 watts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Precious Material And Location
leads surface gold
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Precious Material
gold
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Inclosure Material
metal
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Overall Height
0.250 inches minimum and 0.340 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-66
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Internal Junction Configuration
pnp
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~1
emitter reverse voltage and m80.0 maximum collector to emitter voltage/static/base open
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Test Data Document
54590-352-8517-012 specification
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Terminal Type And Quantity
1 case and 2 pin
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Overall Length
1.252 inches maximum
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Overall Width
0.700 inches maximum
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Mounting Facility Quantity
2
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Internal Configuration
junction contact
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Mounting Method
unthreaded hole
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
m90.0 maximum collector to base voltage/static/emitter open and m5.0 maximum emitter to base voltage,static,collector open and m90.0 maximum collector to emitter voltage,dc with specified circuit between base and emitter and m85.0 maximum collector to
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AS6081 Methods



