JAN2N6033

Semiconductor Devices and Associated Hardware

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JAN2N6033

5961-01-102-2867

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

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Technical Characteristics

  • Overall Length

    0.450 inches maximum

  • Overall Diameter

    0.875 inches maximum

  • Mounting Facility Quantity

    1

  • Electrode Internally-Electrically Connected To Case

    collector

  • Mounting Method

    unthreaded hole

  • Current Rating Per Characteristic

    10.00 amperes maximum base current, dc and 40.00 amperes maximum collector current, dc

  • Manufacturers Code

    81349

  • Test Data Document

    81349-mil-s-19500 specification

  • Specification/Standard Data

    81349-mil-s-19500/528 government specification

  • Inclosure Material

    metal

  • Internal Configuration

    junction contact

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    150.0 maximum breakdown voltage, collector-to-base, emitter open and 120.0 maximum breakdown voltage, collector-to-emitter, base open and 7.0 maximum breakdown voltage, emitter-to-base, collector open

  • Power Rating Per Characteristic

    140.0 watts maximum total power dissipation

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius ambient air

  • Special Features

    junction pattern arrangement: npn

  • Definitive Government Spec/Std Reference

    jan2n6033

  • Non-Definitive Government Spec/Std Reference

    mil-prf-19500/528

  • Terminal Type And Quantity

    1 case and 2 pin

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AS6081 Methods

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