2N5093

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N5093

5961-01-111-5660

5961 - Semiconductor Devices and Associated Hardware

Hybrid Semiconductors & Electronics

TRANSISTOR

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Technical Characteristics

  • Current Rating Per Characteristic

    1.00 amperes source cutoff current maximum and 0.50 amperes source cutoff current minimum

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Power Rating Per Characteristic

    2.0 watts small-signal input power, common-collector absolute

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius ambient air

  • Joint Electronic Device Engineering Council/jedec/case Outline Designation

    to-5

  • Semiconductor Material

    silicon

  • Terminal Length

    1.500 inches minimum

  • Inclosure Material

    metal

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • Special Features

    junction pattern arrangement: pnp

  • Overall Length

    0.260 inches maximum

  • Overall Diameter

    0.370 inches maximum

  • Voltage Rating In Volts Per Characteristic

    6.0 maximum emitter to base voltage, dc and 400.0 maximum collector to base voltage/static/emitter open and 400.0 maximum breakdown voltage, collector-to-emitter, with specified resistance between base and emitter and 350.0 maximum breakdown voltage,

  • ~1

    collector-to-emitter, base open

Certified to
AS6081 Methods

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