2N6341
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N6341
5961 - Semiconductor Devices and Associated Hardware
Joint Electron Device Engineering
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Transfer Ratio
30.0 minimum static forward current transfer ratio, common-emitter and 120.0 maximum static forward current transfer ratio, common-emitter
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Overall Height
0.350 inches nominal
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Mounting Method
unthreaded hole
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Mounting Facility Quantity
2
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Overall Length
1.531 inches maximum
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Terminal Type And Quantity
1 case and 2 pin
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Semiconductor Material
silicon
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Overall Width
1.050 inches maximum
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Voltage Rating In Volts Per Characteristic
150.0 maximum breakdown voltage, collector-to-emitter, base open
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Power Rating Per Characteristic
200.0 watts small-signal input power, common-collector absolute
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Current Rating Per Characteristic
25.00 amperes zero-gate-voltage source current blank
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Internal Configuration
junction contact
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Internal Junction Configuration
npn
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
 
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