R712E
Semiconductor Devices and Associated Hardware
TRANSISTOR
R712E
5961 - Semiconductor Devices and Associated Hardware
L-3 Communications Corporation
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.342 inches maximum
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Overall Diameter
0.720 inches nominal
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Mounting Facility Quantity
2
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Internal Configuration
junction contact
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Mounting Method
unthreaded hole
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Terminal Type And Quantity
1 case and 2 pin
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
200.0 maximum working peak reverse voltage and 140.0 maximum reverse voltage, total rms
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Current Rating Per Characteristic
60.00 amperes maximum repetitive peak forward current and 15.00 amperes maximum average forward current averaged over a full 60-hz cycle
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Internal Junction Configuration
npn
 
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