722906-50

Technical Characteristics

• Features Provided

  programmable and 3-state output and hermetically sealed and monolithic and programmed

• Input Circuit Pattern

  10 input

• Terminal Type And Quantity

  16 printed circuit

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Inclosure Material

  ceramic

• Operating Temp Range

  -0.0/+75.0 deg celsius

• Terminal Surface Treatment

  solder

• Maximum Power Dissipation Rating

  500.0 milliwatts

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  transistor-transistor logic

• Voltage Rating And Type Per Characteristic

  -1.5 volts minimum power source and 5.5 volts maximum power source

• Time Rating Per Chacteristic

  70.00 nanoseconds maximum propagation delay time, low to high level output and 70.00 nanoseconds maximum propagation delay time, high to low level output

• Bit Quantity (Non-Core)

  2048