V22-9-5512-005MJ1005

Semiconductor Devices and Associated Hardware

TRANSISTOR

V22-9-5512-005MJ1005

5961-01-131-1756

5961 - Semiconductor Devices and Associated Hardware

Esw Gmbh

TRANSISTOR

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Technical Characteristics

  • Overall Length

    0.300 inches nominal

  • Special Features

    junction pattern arrangement: npn

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    400.0 maximum collector to emitter voltage, dc with specified circuit between base and emitter

  • Overall Diameter

    0.450 inches maximum

  • Power Rating Per Characteristic

    175.0 watts small-signal input power, common-collector absolute

  • Mounting Facility Quantity

    2

  • Terminal Type And Quantity

    2 uninsulated wire lead and 1 case

  • Internal Configuration

    junction contact-darlington connected

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

  • Current Rating Per Characteristic

    20.00 amperes source cutoff current maximum

Certified to
AS6081 Methods

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