JANTXV1N6070A

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,DIODE

JANTXV1N6070A

5961-01-153-7605

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

SEMICONDUCTOR DEVICE,DIODE

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Technical Characteristics

  • Inclosure Material

    glass

  • Overall Length

    0.293 inches minimum and 0.357 inches maximum

  • Terminal Length

    1.000 inches minimum and 1.625 inches maximum

  • Overall Diameter

    0.215 inches minimum and 0.235 inches maximum

  • Internal Configuration

    junction contact

  • Internal Junction Configuration

    pn

  • Features Provided

    hermetically sealed case and quality assurance level txv

  • Semiconductor Material

    silicon

  • Power Rating Per Characteristic

    1.0 watts maximum reverse power dissipation,dc

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius ambient air

  • Specification/Standard Data

    81349-mil-s-19500/507 government specification

  • Mounting Method

    terminal

  • Voltage Rating In Volts Per Characteristic

    200.0 maximum breakdown voltage,dc and 160.0 maximum working peak reverse voltage

  • Current Rating Per Characteristic

    5.00 microamperes maximum reverse current,dc

  • Test Data Document

    81349-mil-s-19500 specification

  • Terminal Type And Quantity

    2 uninsulated wire lead

  • Function For Which Designed

    transient suppressor

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    do-13

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AS6081 Methods

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