44A354367P1
Semiconductor Devices and Associated Hardware
TRANSISTOR
44A354367P1
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Junction Configuration
pnp
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Mounting Method
terminal
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Voltage Rating In Volts Per Characteristic
-90.0 maximum collector to base voltage/static/emitter open and -7.0 maximum emi
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Power Rating Per Characteristic
7.0 watts maximum total device dissipation
 - 
                                    
Transfer Ratio
140.0 maximum static forward current transfer ratio, common-emitter
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Terminal Type And Quantity
3 uninsulated wire lead
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Current Rating Per Characteristic
1.00 amperes maximum collector current, dc and 0.50 amperes maximum base current
 - 
                                    
~1
, dc
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~1
tter to base voltage, static, collector open
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
 - 
                                    
Terminal Circle Diameter
0.200 inches nominal
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Internal Configuration
junction contact
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Overall Diameter
0.370 inches maximum
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Terminal Length
0.500 inches minimum
 - 
                                    
Overall Length
0.260 inches maximum
 - 
                                    
Inclosure Material
metal
 
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